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SEMICONDUCTOR DEVICE FABRICATION USING A PHOTOMASK DESIGNED USING MODELING AND EMPIRICAL TESTING
SEMICONDUCTOR DEVICE FABRICATION USING A PHOTOMASK DESIGNED USING MODELING AND EMPIRICAL TESTING
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机译：利用建模和经验测试设计的光掩模制造半导体器件
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摘要
A method of fabricating a semiconductor device is outlined in Figure 3. An ideal (or desired) pattern of a layer of the semiconductor device is designed (305). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e.g., aerial image effects (315, 320). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors (340). The second pass corrected pattern can be used to build a photomask (345). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).
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