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Gate drive circuit for insulated gate semiconductors with the combined control of both the rate of change of the drain current and the rate of change of the drain source voltage
Gate drive circuit for insulated gate semiconductors with the combined control of both the rate of change of the drain current and the rate of change of the drain source voltage
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机译：用于绝缘栅半导体的栅极驱动电路，具有漏极电流的变化率和漏极-源极电压的变化率的组合控制
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摘要
A method of control of the current and voltage switching trajectories of insulated gate power semiconductor switches, more specifically MOSFETs and insulated gate bipolar transistor devices (IGBTs), is disclosed. MOSFETs and IGBTs are used in switch mode power supplies because of their easy driving ability and their ability to handle high currents and voltages at high-switching frequencies. However, the switching trajectories for both types of devices are responsible for both common-mode electromagnetic emissions generated by the drain current waveform and power losses in the commutation cell. These two characteristics represent opposing design objectives for power converters. The current invention uses a hybrid voltage/current gate signal source with feedback of the gate charge (or discharge) current to dynamically and independently control the drain current and drain voltage of an insulated semiconductor device. The rate of change of drain current is controlled by the voltage source traversing the transconductance curve while the rate of change of the drain voltage is controlled by dynamic variations in the current source due to feedback.
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