Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge

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• 2. 电荷发生半导体基板用凸起形成装置、电荷发生半导体基板的除静电方法、电荷发生半导体基板用除静电装置、及电荷发生半导体基板 [P] . 中国专利： CN100382261C . 2008.04.16
• 3. Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge [P] . 美国专利： US06335630B1 . 2002-01-01

  机译： 使用电晕电荷测量半导体晶片上氧化物层总电荷的非接触方法

• 4. Contactless method for measuring total charge of an insulating layer on a substrate using corona charge [P] . 美国专利： US6191605B1 . 2001-02-20

  机译： 使用电晕电荷测量衬底上绝缘层总电荷的非接触方法

• 5. Method for treating semiconductor wafers with corona charge and devices using corona charging [P] . 美国专利： US6127289A . 2000-10-03

  机译： 用电晕电荷处理半导体晶片的方法和使用电晕电荷的装置

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