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Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer
Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer
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机译：具有金属栅电介质金属栅电极和金属电弧层的金属氧化物栅电极堆叠
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摘要
A method for forming a tantalum-based anti-reflective coating (ARC) layer begins by forming an MOS metallic gate electrode layer (20) over a substrate (20). The MOS metallic gate electrode layer (20) is covered with an ARC layer (22). The ARC layer is preferably tantalum pentoxide or a tantalum pentoxide layer doped with one or more of nitrogen atoms and/or silicon atoms. The layers (22 and 20) are then selectively masked photoresist (24) that is selectively exposed to deep ultraviolet (DUV) radiation (28). The ARC layer (22) improves lithographic critical dimension (CD) control of the MOS metallic gate during exposure. The final MOS metallic gate is then patterned and etched using a fluorine-chlorine-fluorine time-progressed reactive ion etch (RIE) process, whereby metallic-gate MOS transistors are eventually formed.
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