An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition InxGa1−xAs1−yNy with 0x≦0.2 and 0y≦0.04 and a p-type GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of 70%.
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机译：公开了一种InGaAsN / GaAs半导体p-n异质结，该异质结用于形成0.95-1.2eV带隙光电检测器，并用于高效多结太阳能电池。 InGaAsN / GaAs pn异质结是通过在砷化镓（GaAs）或锗（Ge）衬底上外延生长具有半导体合金成分In x 的n型氮化铟镓铟（InGaAsN）层而形成的Ga 1＆minus; x As 1＆minus; y N y ，具有0 70％。
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