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Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell
Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell
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机译：衬底空穴注入用于中和非易失性存储单元编程期间产生的溢出电荷
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摘要
A method of erasing a memory cell that includes a first region and a second region with a channel therebetween that has spillover electrons and a gate above the channel, and a charge trapping region that contains a first amount of charge. The method includes generating neutralizing holes in the substrate, moving the neutralizing holes to the channel and substantially neutralizing the spillover electrons with the neutralizing holes moved to the channel.
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