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Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth

机译:控制半导体晶体生长以自动从锥度生长过渡到目标直径生长的方法

摘要

A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.
机译:与切克劳斯基拉晶机配合使用的控制方法。该方法包括以第一目标提拉速率从熔体中拉出生长的晶体以使晶体的锥度部分生长并测量锥度的晶体直径。该方法还包括根据晶体直径相对于时间和第一目标提拉速率的变化来估计直径的斜率。该方法还包括根据所估计的斜率预测从锥度开始生长的晶体直径D i 。当测得的晶体直径达到预测的晶体直径D i 时,通过将拉速提高到第二个目标拉速,该方法可以控制晶体的生长,从而从锥度生长过渡到体生长。当使用预定义的直径D i 来启动晶体生长时,该方法还根据估计的斜率确定第二目标拉速。

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