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Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
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机译:用于双栅CMOS器件的氮注入超薄栅氧化物的形成方法
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摘要
A method of forming a nitrogen-implanted gate oxide in a semiconductor device includes preparing a silicon substrate; forming an oxide layer on the prepared substrate; and implanting N+ or N2+ ions into the oxide layer in a plasma immersion ion implantation apparatus.
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