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Manufacture method of high coercivity FePt-Si3N4 granular composite thin films
Manufacture method of high coercivity FePt-Si3N4 granular composite thin films
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机译:高矫顽力的FePt-Si3N4颗粒复合薄膜的制备方法
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摘要
A method of producing high coercivity FePt—Si3N4 granular composite thin films for magnetic recording media is invented. The method includes magnetron co-sputtering of FePt and Si3N4 targets at controlled sputtering power and sputtering argon gas pressure to form a selective composition of granular FePt—Si3N4 thin film on a low temperature substrate, then post-annealed in vacuum at selective time period and temperature. Two kinds of FePt targets can be used. One is the FePt alloy target. The other one is a composite target consisting of an iron disk overlaid with small Pt pieces. This arrangement provides a wide range of effective target compositions and therefore film compositions. FePt—Si3N4 films were deposited on natural oxidized silicon wafer or quartz glass substrate at room temperature. The as-deposited film has soft magnetic properties and granular structure with soft magnetic &ggr;-FePt particles dispersed in amorphous Si3N4 matrix. The as-deposited film cannot be used as magnetic recording medium due to its low coercivity. After annealing at controlled conditions for a desirable temperature and time period in vacuum, the film also has granular structure but the magnetic soft &ggr;-FePt phase is transformed into magnetic hard &ggr;1-FePt phase. This film has high coercivity and its magnetic easy-axis is parallel to the film plane. It may be used as high-density magnetic recording medium.
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机译:发明了一种生产高矫顽力FePt& Si 3 Sub> N 4 Sub>颗粒状磁性记录介质薄膜的方法。该方法包括在受控的溅射功率下磁控共溅射FePt和Si 3 Sub> N 4 Sub>靶以及溅射氩气压力以形成粒状FePt& Si 3 Sub> N 4 Sub>薄膜,然后在选定的时间段和温度下在真空中进行后退火。可以使用两种FePt靶。一种是FePt合金靶材。另一个是复合靶,由覆盖小Pt片的铁盘组成。这种布置提供了广泛范围的有效靶组合物,因此提供了膜组合物。在室温下,将FePt& Si 3 Sub> N 4 Sub>膜沉积在天然氧化硅晶片或石英玻璃基板上。所沉积的膜具有软磁性质和粒状结构,其中-FePt颗粒分散在非晶Si 3 Sub> N 4 Sub>基体中。所沉积的膜由于其低矫顽力而不能用作磁记录介质。在控制的条件下在真空中退火达到理想的温度和时间后,该膜也具有颗粒结构,但软的&ggr; -FePt相转变为硬的 1 Sub> -FePt相。该薄膜具有高矫顽力,其磁易轴平行于薄膜平面。它可用作高密度磁记录介质。
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