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Photo mask for manufacturing semiconductors has monitoring marking with coarse, high density and cross patterns on substrate for assuring dimensions of actual pattern and coincidence
Photo mask for manufacturing semiconductors has monitoring marking with coarse, high density and cross patterns on substrate for assuring dimensions of actual pattern and coincidence
The device has a substrate, an actual pattern on the substrate and a monitoring marking on the substrate for assuring the dimensions of the actual pattern. The monitoring marking has a coarse pattern (11) and a high density pattern (10) of higher density than the coarse pattern. The monitoring marking can also have a cross pattern for checking accuracy of coincidence. Independent claims are also included for the following: a photo mask pair, a method of manufacturing a semiconducting device and a semiconducting device.
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