首页>
外国专利>
Non-volatile ferroelectric memory comprises partial word lines, bit lines that cut the partial word lines, source/drain impurity regions formed on both sides of the word lines, and ferroelectric capacitors
Non-volatile ferroelectric memory comprises partial word lines, bit lines that cut the partial word lines, source/drain impurity regions formed on both sides of the word lines, and ferroelectric capacitors
展开▼
机译：非易失性铁电存储器包括部分字线，切割部分字线的位线，形成在字线两侧的源/漏杂质区和铁电电容器
展开▼
页面导航
摘要
著录项
相似文献
摘要
Non-volatile ferroelectric memory comprises partial word lines (SWL1, SWL2) formed at intervals in one direction; bit lines (B/L1, B/L2) that cut the partial word lines; source/drain impurity regions formed on both sides of the word lines; a first ferroelectric capacitor (FC1); and a second ferroelectric capacitor (FC2). An Independent claim is also included for a non-volatile ferroelectric memory. Preferred Features: The first drain impurity region and the second drain impurity region are electrically connected to the bit lines via a first contact stop layer and as second contact stop layer.
展开▼
