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High amplification surface-emitting diode cascade laser, includes quantum wells, p-n junctions and tunnel contacts with angled light exit facets in geometry defined from wavelengths and refractive indices
High amplification surface-emitting diode cascade laser, includes quantum wells, p-n junctions and tunnel contacts with angled light exit facets in geometry defined from wavelengths and refractive indices
The layered waveguide system (5), includes z quantum wells and p-n junctions (13); with z-1 tunnel contacts. These are located respectively at field antinodes, and at nodes of the highest mode. z is the total number of modes which can be introduced into the waveguide layer system. Light exit facets (2) incline at angle phi with respect to the substrate (1) normal (10). This is between the minimum angle phi min for vertical radiation and the maximum angle phi max for radiation parallel to the substrate surface (3). The tangent of phi min equals half the emission wavelength in the waveguide layer system, divided by the spacing of the quantum wells less the quotient of the refractive index of the medium surrounding the diode cascade laser and the refractive index of the waveguide layer system. The tangent of the angle phi max, equals half the emission wavelength in vacuum, divided by the spacing of the quantum wells, and the refractive index of the waveguide layer system reduced by unity.
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