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Pressures sensor has moulded housing, pressure channel to semiconducting pressure transducer formed by interior vol. of cap formed by cap upper side, cap wall and opening
Pressures sensor has moulded housing, pressure channel to semiconducting pressure transducer formed by interior vol. of cap formed by cap upper side, cap wall and opening
The pressure sensor has a semiconducting pressure transducer with a chip (3) mounted on a base (4) and contg. a pressure membrane (5) and connected to contact sections (11) of a conductor grid (10), esp. a leadframe. A housing (30) is formed by moulding. A cap (7) partly embedded in the moulding material has an opening (9) facing the transducer, a cap upper side (18) opposite the opening with a passage (8) and a cap wall (17) extending from the upper side and bounding the opening. The upper side of the cap with the opening is freely accessible from the outside of the moulded housing and the interior vol. of the cap formed by the cap upper side, the cap wall and the opening forms a pressure channel to the transducer.
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