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Process for implanting doping materials in a pre-doped silicon carbide substrate used in the production of power diodes comprises producing zones of second conductivity in a substrate of first conductivity and thermally treating
Process for implanting doping materials in a pre-doped silicon carbide substrate used in the production of power diodes comprises producing zones of second conductivity in a substrate of first conductivity and thermally treating
Implanting doping materials in a pre-doped SiC substrate (1) comprises producing two second conductivity zones (5, 6) in a first conductivity substrate using mask (2) by implanting materials with different acceleration energy, and heat treating doped and implanted SiC substrate in an oven to cure lattice errors. Zone (5) is more highly doped than the blocking layer edge zone (6) lying below it. Preferred Features: A mask opening is selected during the implantation of the blocking layer edge zone so that it is larger than the highly doped zone (5) and the blocking layer edge zone extends up to the surface of the substrate.
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