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Semiconductor laser component has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers
Semiconductor laser component has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers
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机译：半导体激光器组件具有由两个不同的混合晶体系统制成的内边界层，其带距小于外边界层的带距
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Semiconductor laser component has inner boundary layers (5, 7) made of two different mixed crystal systems whose band distances (Ei1, Ei2) are smaller than those of the outer boundary layers (4, 8). Semiconductor laser component has inner boundary layers (5, 7) made of two different mixed crystal systems whose band distances (Ei1, Ei2) are smaller than those of the outer boundary layers (4, 8). The energetic layers of the conducting and valence band edges of the systems are arranged in such a way that the valence band edges of the n-conducting inner boundary layer (5) lies energetically lower than the valence band edge of the p-conducting inner boundary layer (7). The conducting band edges of the p-conducting inner boundary layer lies energetically higher than the conducting band edge than the conducting band edges of the n-conducting inner boundary layer. The conducting band edge of the n-conducting inner boundary layer lies energetically lower than the conducting band edge of the n-conducting outer boundary layer (4). The valence band edge of the p-conducting inner boundary layer lies energetically higher than the valence band edge of the p-conducting outer boundary layer (8).
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