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-- Elimination of the titanium nitride film deposition in tungsten plug technology using PE-CVD-Ti and in-situ plasma nitridation
-- Elimination of the titanium nitride film deposition in tungsten plug technology using PE-CVD-Ti and in-situ plasma nitridation
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机译：-使用PE-CVD-Ti和原位等离子体氮化消除钨塞技术中的氮化钛膜沉积
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摘要
An effective barrier layer against chemical attack of fluorine during the chemical deposition of tungsten from a tungsten fluoride feed gas is formed by the present invention. The titanium nitride conformal shielding film 140 may be formed by the in-situ nitridation of the titanium thin film 136. [ The substrate 28 is reduced in pressure and placed in a module 20 with a temperature raised from 350 to about 700C. The titanium film 136 is then deposited by plasma-enhanced chemical vapor deposition of titanium tetrahalide and hydrogen. Next, the nitrogen film 136 is deposited on the nitrogen containing plasma 141, for example, ammonia, N2Or NH3/ N2Based plasma, a titanium nitride 140 is formed on the titanium film 136. The tungsten 142 is then attached to the titanium nitride film 140 by plasma-enhanced chemical vapor deposition. Both the titanium deposition and the nitridation steps can be performed without removing the substrate 28 from the module 20 in the same processing module 20 until the reaction steps are completed. The tungsten attachment step may be preformed in a separate processing device or in a module 20 used for attaching and processing titanium.
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机译：通过本发明，形成了在从氟化钨进料气体化学沉积钨期间抵抗氟的化学侵蚀的有效阻挡层。可以通过钛薄膜136的原位氮化形成氮化钛保形屏蔽膜140。[降低基板28的压力并以从350℃升高到大约700℃的温度放置在模块20中。然后通过等离子体增强的四卤化钛和氢的化学气相沉积来沉积钛膜136。接下来，将氮膜136沉积在例如基于氨，N 2 或NH 3 / N 2 的含氮等离子体141上在等离子体处理之后，在钛膜136上形成氮化钛140。然后，通过等离子体增强化学气相沉积将钨142附着到氮化钛膜140上。可以执行钛沉积步骤和氮化步骤，而无需在相同的处理模块20中从模块20移除基板28直到完成反应步骤。钨的附接步骤可以在单独的处理装置中或在用于附接和处理钛的模块20中执行。
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