首页> 外国专利> / RESISTIVE HEATING OF POWER COIL TO REDUCE TRANSIENT HEATING/START UP EFFECTS

/ RESISTIVE HEATING OF POWER COIL TO REDUCE TRANSIENT HEATING/START UP EFFECTS

机译:/电阻线圈的电阻加热,以减少瞬态加热/启动的影响

摘要

The method for pre-heating a coil used to generate a plasma field in a process chamber of a semiconductor manufacturing system and apparatus. Prior to sputter depositing the material onto the substrate and the material to preheat the coil in the chamber. Coil is preheated to a temperature equal to the equilibrium reached by the coil during the sputter deposition process, or that at least it is desired predetermined temperature. Or it preheated with a preheating current of a frequency that is lower than the minimum frequency necessary for the combustion plasma, if the process chamber the pressure that is formed in the plasma suppression, may be the warm-up coil for a predetermined time.
机译:该方法用于在半导体制造系统和设备的处理室中预热用于产生等离子体场的线圈。在溅射之前,将材料沉积到基板上,然后将材料预热到腔室内。将线圈预热至等于在溅射沉积过程中线圈达到的平衡温度,或者至少加热至所需的预定温度。或者,以低于燃烧等离子体所需的最小频率的频率的预热电流对其进行预热,如果处理室中在等离子体抑制中形成的压力为预定时间的预热线圈。

著录项

  • 公开/公告号KR20010023947A

    专利类型

  • 公开/公告日2001-03-26

    原文格式PDF

  • 申请/专利权人 조셉 제이. 스위니;

    申请/专利号KR20007002652

  • 发明设计人 반고흐제임스;

    申请日2000-03-13

  • 分类号H01J37/32;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:59

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