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1/1 Design and fabrication of electronic devices with InA1AsSb/A1Sb barrier
1/1 Design and fabrication of electronic devices with InA1AsSb/A1Sb barrier
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机译：1/1具有InA1AsSb / A1Sb势垒的电子设备的设计与制造
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摘要
The invention is arranged on a GaAs substrate 8, and the GaAs substrate with a base that is, InAs channel layer 16 is disposed over and, with the InAs channel layer of AlSb layer 18 disposed on the AlSb layer In, Al , in x Al 1-x as y Sb 1-y layer 20, the in x Al 1-x as y Sb 1-y InAs cap layer 22, which is disposed on the layer comprising at least one of as and , InAs cap layer with the InAs located below the channel layer, and AlSb layer 14, which is in contact with the substrate, the AlSb layer in a p + GaSb layer 12, at least one of the ohmic contact layer (24, 26) and , isolated a Schottky gate layer 28 and a gate bonding through a base pad having a pad disposed over and in contact with the 1-x as y Sb 1- y layer in x Al, and the contact between the InAs channel layer and has a trench reaching down to the substrate to form a gate air bridge to prevent.
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机译：本发明被布置在GaAs衬底8上，并且具有基底即InAs沟道层16的GaAs衬底被布置在AlSb层18的InAs沟道层之上，并且AlSb层18的InAs沟道层被布置在AlSb层In上，Al < Sub>，在x Al 1-x中作为 y Sb 1-y层20，在x Al 1-x中以作为y Sb 1-y InAs盖层22，其设置在以下层中：a和，具有位于通道层下方的InAs的InAs盖层和与之接触的AlSb层14中的至少一个与衬底，p + GaSb层12中的AlSb层，至少一个欧姆接触层（24、26）和肖特基栅极层28和通过基垫的栅极键合隔离在 x 中的y Sb 1- y层上放置一个焊盘并与 1-x接触Al与InAs沟道层之间的接触并具有向下延伸至衬底的沟槽以形成防止形成的栅极气桥。
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