首页>
外国专利>
fabrication method of amorphous silicon thin-film transistor for liquid-crystal display
fabrication method of amorphous silicon thin-film transistor for liquid-crystal display
展开▼
机译：液晶显示器用非晶硅薄膜晶体管的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method for manufacturing an amorphous silicon TFT(Thin Film Transistor) for LCD(Liquid Crystal Display) is provided to reduce the number of masks for manufacturing the TFT, by forming a nickel silicide or a nickel silicide/a metal(such as Mo,Cr,Al,Ti,Au,Pd,Ag) between a high density impurity layer and a TCO(Transparent Conduction Oxide). CONSTITUTION: An amorphous silicon TFT(Thin Film Transistor) includes an insulating substrate(10), a gate electrode(20) on the insulating substrate, an active layer(40), a source/drain electrode(70) and a passivation layer(110). In the amorphous TFT, a double layer of a metal and a nickel silicide for a source/drain contact are formed on an amorphous silicon layer injected with high density ions or on an amorphous silicon layer including high density impurities.
展开▼
