TARGET OF INTERMETALLIC COMPOUND WITH B2-ORDERED LATTICE STRUCTURE, PRODUCTION METHOD THEREOF AND MAGNETIC RECORDING MEDIUM HAVING B2-STRUCTURED UNDERLAYER

• 1. 具有啁啾超晶格最终势垒结构的深紫外LED及制备方法 [P] . 中国专利： CN110600591B . 2021.11.26
• 2. 一种具有超晶格结构缓冲层的相变存储单元及制备方法 [P] . 中国专利： CN112909162A . 2021-06-04
• 3. Target of intermetallic compound with B2-ordered lattice structure, production method thereof and magnetic recording medium having B2- structured underlayer [P] . 美国专利： US6159625A . 2000-12-12

  机译： 具有b2有序的晶格结构的金属间化合物的靶，其制备方法以及具有b2结构的下层的磁记录介质

• 4. METHOD FOR MANUFACTURING Ru-Al INTERMETALLIC COMPOUND TARGET, Ru-Al INTERMETALLIC COMPOUND TARGET, AND MAGNETIC RECORDING MEDIUM [P] . 日本专利： JP2003328118A . 2003-11-19

  机译： 制备Ru-Al金属间化合物靶，Ru-Al金属间化合物靶和磁记录介质的方法

• 5. B2 RULE LATTICE INTERMETALLIC COMPOUND TARGET AND MAGNETIC RECORDING MEDIUM [P] . 日本专利： JP2000017433A . 2000-01-18

  机译： B2规则晶格金属间化合物靶标和磁记录介质

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