首页> 外国专利> METHOD AND DEVICE FOR DYNAMICALLY OBSERVING CHANGE IN CRYSTAL PARTICLE

METHOD AND DEVICE FOR DYNAMICALLY OBSERVING CHANGE IN CRYSTAL PARTICLE

机译:动态观察晶体颗粒变化的方法和装置

摘要

PROBLEM TO BE SOLVED: To observe the dynamic change in micro organization and a sample in a park shape by dynamically observing the change in a crystal particle in such state as heating and cooling with a secondary electron image or a reflection electron image from the sample where a condensation ion beam is applied. ;SOLUTION: The acceleration ion of a Ga ion source 1 scans a sample 5 by a deflection coil 2 after condensation. A sample surface is subjected to sputtering by the ion beam, and a secondary electron and a reflection electron being generated due to the collision of the ion against the sample 5 are detected by a secondary electron detector 3 and a reflection electron detector 4, respectively. A heating/cooling holder 6 for fixing the sample 5 can heat or cool the sample 5 indirectly up to 1,500°C. The secondary electron detector 3 that is located at the upper portion of the sample 5 is positioned at an area that is not subjected to direct sunlight in observation where temperature is equal to or more than 1,000°C since image quality deteriorates at 1,000°C or higher due to directly sunlight caused by the temperature increase of the sample, thus bending the secondary electron and capturing it by the gradient of an electric field. Then, the change in the crystal particle is dynamically observed during heating, cooling, or the like by the detected secondary electron image or the reflection electron image.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过动态观察晶体颗粒在加热和冷却状态下的二次电子图像或反射电子图像,观察样品中微观组织和公园形状的动态变化,其中施加冷凝离子束。 ;解决方案:Ga离子源1的加速离子在凝结后通过偏转线圈2扫描样品5。样品表面通过离子束进行溅射,并且由于离子与样品5的碰撞而产生的二次电子和反射电子分别由二次电子检测器3和反射电子检测器4检测。用于固定样品5的加热/冷却保持器6可以间接地将样品5加热或冷却至高达1,500℃。位于样品5的上部的二次电子检测器3位于在观察温度不超过1000℃的情况下,因为图像质量在1000℃下劣化,所以该位置不处于直射阳光下。由于样品温度升高直接导致阳光直射,因此C或更高,从而弯曲二次电子并通过电场梯度捕获二次电子。然后,通过检测到的二次电子图像或反射电子图像,在加热,冷却等期间动态地观察到晶体颗粒的变化。COPYRIGHT:(C)2000,JPO

著录项

  • 公开/公告号JP2000321224A

    专利类型

  • 公开/公告日2000-11-24

    原文格式PDF

  • 申请/专利权人 NIPPON STEEL CORP;

    申请/专利号JP19990128619

  • 发明设计人 MARUYAMA NAOKI;SUGIYAMA MASAAKI;

    申请日1999-05-10

  • 分类号G01N23/225;H01J37/252;

  • 国家 JP

  • 入库时间 2022-08-22 01:28:38

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