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METHOD FOR SETTING DESIGN MARGIN OF WAFER PATTERN, METHOD FOR SETTING PATTERN ACCURACY AND METHOD FOR SETTING DESIGN MARGIN OF MASK PATTERN
METHOD FOR SETTING DESIGN MARGIN OF WAFER PATTERN, METHOD FOR SETTING PATTERN ACCURACY AND METHOD FOR SETTING DESIGN MARGIN OF MASK PATTERN
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机译：晶圆图案设计边距的设置方法，图案精度设置方法和面膜图案设计边距的设置方法
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摘要
PROBLEM TO BE SOLVED: To provide a practicable method for setting a design margin of mask patterns which determines the cross relations of the design margin, dimensional errors and superposition errors while studying an actual semiconductor process, a method for setting pattern accuracy and a method for setting the design margin of wafer patterns. ;SOLUTION: The respective methods consist in selecting arbitrary two edges of underground and above-the-ground patterns P1 and Pu by specifying the circuit elements over two different substrate layers of the semiconductor process. The misalignment of the respective edge themselves is set as dimensional errors D1 and D2 and the relative misalignment of superposing the above-the-ground patterns on the ground patterns is set as superposition errors R1 and R2. The design margin M is calculated from the statistical distance of respective probability distributions P2(x2) and P1(x1) by these dimensional errors D1 and D2 and the superposition errors R1 and R2. Also, the pattern accuracy of the mask pattern is reverse calculated from the design margin M.;COPYRIGHT: (C)2001,JPO
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