首页> 外国专利> LOCALLY DEGENERATE SEMICONDUCTOR YBCO ELEMENT USING AFM CHIP, SUPERCONDUCTOR YBCO ELEMENT, AND MANUFACTURING METHOD THEREOF

LOCALLY DEGENERATE SEMICONDUCTOR YBCO ELEMENT USING AFM CHIP, SUPERCONDUCTOR YBCO ELEMENT, AND MANUFACTURING METHOD THEREOF

机译:使用AFM芯片,超导体YBCO元素局部退化的YBCO元素及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a locally degenerated semiconductor YBCO element, using AFM, a superconductor YBCO element, and a manufacturing method thereof, in which a semiconductor YBCO thin film is locally degenerated to an insulator by use of an AFM chip, or a superconductor YBCO film is locally degenerated into a non-superconductor.;SOLUTION: In a locally degenerated semiconductor YBCO element using an AFM chip, and a method for manufacturing a locally degenerate superconductor YBCO element, a voltage is applied to a local region of a semiconductor YBCO channel or a superconductor YBCO channel by use of the AFM chip to form an insulator YBCO region or a non-superconductor YBCO region, whereby a tunnel junction is formed without a patterning process through photolithography, and a fining process, such as dry-and/or wet-etching, etc.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种使用AFM的局部退化的半导体YBCO元件,超导体YBCO元件及其制造方法,其中,通过使用AFM芯片或半导体晶片将半导体YBCO薄膜局部退化为绝缘体。解决方案:在使用AFM芯片的局部退化的半导体YBCO元件以及制造局部退化的超导体YBCO元件的方法中,将电压施加到半导体的局部区域通过使用AFM芯片形成绝缘体YBCO区域或非超导体YBCO区域的YBCO通道或超导体YBCO通道,从而形成隧道结,而无需通过光刻的构图工艺以及诸如干法和干法之类的精细工艺。 /或湿法蚀刻等;版权所有:(C)2001,日本特许厅

著录项

  • 公开/公告号JP2001168404A

    专利类型

  • 公开/公告日2001-06-22

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD;

    申请/专利号JP20000336044

  • 发明设计人 KIN HEIBAN;SO INSO;

    申请日2000-11-02

  • 分类号H01L39/24;H01L39/22;

  • 国家 JP

  • 入库时间 2022-08-22 01:31:26

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