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Crystal distortion measuring apparatus and crystal distortion measurement method

机译:晶体畸变测定装置及晶体畸变测定方法

摘要

PROBLEM TO BE SOLVED: To measure a crystal strain in a very small region inside a semiconductor crystal. ;SOLUTION: An He-Ne laser 1 which is installed in such a way that the recording face of a negative film 2 on which the transmission electron microscope image of a semiconductor crystal as a sample is recorded is irradiated with a laser beam vertically is provided. A semitransparent plane screen 3 onto which a diffraction image generated at a time when the laser beam is transmitted through the transmission electron microscope image recorded on the negative film 2 is projected is provided. A CCD camera 4 which images the projected diffraction image is provided. A computer 5, for measurement and control, which scans the irradiation position of the laser beam, which fetches imaged image data from the, CCD camera 4 in synchronization with a scanning operation which measures the position or the intensity of a diffraction spot on the diffraction image on the basis of the imaged image data and which maps the relationship of the position of the diffraction spot or the intensity of the refraction spot with the every irradiation position is provided.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:测量半导体晶体内部很小区域的晶体应变。 ;解决方案:提供He-Ne激光器1,该激光器的安装方式是,向负片2的记录面垂直照射激光束,该负片2上记录有作为样品的半导体晶体的透射电子显微镜图像。 。提供了半透明平面屏幕3,在该半透明平面屏幕3上投影了当激光束通过记录在负片2上的透射电子显微镜图像透射时产生的衍射图像。提供了对投影的衍射图像成像的CCD相机4。用于测量和控制的计算机5与扫描操作同步地扫描激光束的照射位置,该激光束从CCD照相机4获取成像图像数据,该扫描操作测量衍射上的衍射点的位置或强度。根据成像的图像数据提供图像,并提供衍射点位置或折射点强度与每个照射位置的关系图。版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP3134852B2

    专利类型

  • 公开/公告日2001-02-13

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP19980238863

  • 发明设计人 井手 隆;

    申请日1998-08-25

  • 分类号G01N23/04;H01J37/26;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 01:32:30

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