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Area rate of change calculation manner, capacitance calculation manner and area rate of change monitoring device null of the polysilicon thin film which possesses semi- globose
Area rate of change calculation manner, capacitance calculation manner and area rate of change monitoring device null of the polysilicon thin film which possesses semi- globose
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机译：具有半球形的多晶硅薄膜的面积变化率计算方式，电容计算方式和面积变化率监测装置无效
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摘要
The present invention is a method which can obtain an actual value close to a desired capacitance of capacitor by precisely monitoring the area variation rate of film by using a correlation between a height of hemispherical grains formed on a surface of film and a surface area of film. The present invention provides a method of calculating an area variation rate 'CE' by using the porosity ratio 'fv' and the height 't' of hemispherical grains and measuring the capacitance of capacitor by using the obtained area variation rate. According to this method, the area variation rate of film can be obtained close to actual value by measuring the height of hemispherical grains formed on the surface of film, and the variation in capacitance before completion of capacitor can be precisely obtained. In addition, the present invention has effects of improving the reliability and manufacturing yield of capacitor by enabling the monitoring of area variation rate close to actual value in the step of forming the hemispherical grains on the surface of film.
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