首页>
外国专利>
Process for device fabrication using a high-energy boron implant
Process for device fabrication using a high-energy boron implant
展开▼
机译：使用高能硼注入的器件制造工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
A process for semiconductor device fabrication in which a Czochralski silicon substrate is implanted with boron is disclosed. The boron is implanted using an energy of about 500 keV to about 3 MeV and a dose of about 3×10.sup.13 /cm.sup.2 to about 3×10.sup.14 /cm. sup.2. In order to reduce the threading dislocation density in the substrate to less than about 10.sup.3 /cm.sup.2 at a depth in the substrate of at least about 0.5 &mgr;m, after the implant, the substrate is annealed in a two-step process. First the substrate is annealed at a temperature in the range of about 725° C. to about 775° C. followed by an anneal at a temperature of at least about 900° C. The duration of the first step is selected to provide a dislocation density of less than about 10.sup.3 /cm.sup.2 at the desired depth in the substrate.
展开▼
机译：公开了一种半导体器件制造方法，其中在直拉硅衬底上注入了硼。用约500keV至约3MeV的能量和约3×10×13 / cm 2〜约3×10 14 / cm的剂量注入硼。 sup.2。为了在至少约0.5μm的基底深度中将基底中的螺纹位错密度减小到小于约10sup 3 / cm 2，在植入之后，将基底退火。一个两步过程。首先，在大约725℃的温度范围内对衬底进行退火。到大约775℃。然后在至少约900℃的温度下退火。选择第一步的持续时间以在衬底中的所需深度处提供小于约10.3 / cm 2的位错密度。
展开▼
