首页> 外国专利> A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures

A.sub.4 MeSb.sub.3 O.sub.12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures

机译：用于生长用于HTSC /钙钛矿氧化物器件和微波器件结构的外延HTSC /钙钛矿氧化物膜的A.sub.4 MeSb.sub.3 O12衬底和介电/缓冲层

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摘要

Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

机译：通式A.sub.4 MeSb.sub.3 O.sub.12的化合物，其中A是钡（Ba）或锶（Sr），Me是选自锂（Li）的碱金属离子，钠（Na）和钾（K）已制备并包含在高临界温度薄膜超导体，铁电体，热电体，压电体和混合器件结构中。

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公开/公告号US6084246A

专利类型
公开/公告日2000-07-04

原文格式PDF
申请/专利权人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY;
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申请/专利号US19990371166
发明设计人 ARTHUR TAUBER;WILLIAM D. WILBER;ROBERT D. FINNEGAN;STEVEN C. TIDROW;
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申请日1999-08-10
分类号H01L29/06;H01L31/0256;H01L39/22;
国家 US
入库时间 2022-08-22 01:36:45

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