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Assessing plasma induced gate dielectric degradation with stress induced leakage current measurements
Assessing plasma induced gate dielectric degradation with stress induced leakage current measurements
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机译：通过应力感应泄漏电流测量评估等离子体感应栅极介电质的退化
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摘要
Plasma induced degradation of thin gate dielectric layers, e.g. , silicon dioxide layers of less than 50 Å, is assessed by impressing a constant current density across the gate dielectric layer and measuring the resulting stress induced leakage current as a function of time. The sensitivity of the stress induced leakage current to traps generated in a thin gate dielectric layer enables the use of stress induced leakage current measurements to monitor plasma induced damage during various phases of semiconductor manufacturing.
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