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Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon
Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon
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机译：具有纳米结构的多孔硅和介孔结构的多孔硅的半导体发光器件
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摘要
At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n- type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission
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