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METHOD FOR SELECTIVE DOPING OF THE INTRINSIC COLLECTOR OF A VERTICAL BIPOLAR TRANSISTOR BASED ON EPITAXIA
METHOD FOR SELECTIVE DOPING OF THE INTRINSIC COLLECTOR OF A VERTICAL BIPOLAR TRANSISTOR BASED ON EPITAXIA
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机译:基于上位性的垂直双极晶体管内在集电极的选择性掺杂方法
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P The selective doping of the collector is carried out by a first dopant implantation before the epitaxy of the base and by a second implantation of dopants through the epitaxial base. Two implanted zones (SIC1, SIC2) of different widths are obtained. The transistor base is thinned and the collector resistance optimized. / P
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