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X-ray fluorescence analysis of thin film structure comprises irradiating with primary X-ray beam to produce hard and soft secondary radiation which is measured and calculating e.g. thickness of chemical elements
X-ray fluorescence analysis of thin film structure comprises irradiating with primary X-ray beam to produce hard and soft secondary radiation which is measured and calculating e.g. thickness of chemical elements
A composite material sample comprising a silicon substrate coated with a 20-250 nm layer of tungsten silicide (WSi 6 , where x approximately equal 2.6), is analyzed by X-ray fluorescence spectroscopy. The sample is irradiated with a primary X-ray beam to produce 'hard' and 'soft' secondary radiation, which are both measured. The thickness and/or concentration of the chemical elements can then be calculated from the intensity measurements at the three radiation wavelengths. An Independent claim is also included for a fluorescent spectroscopic analytical apparatus for the determination of coating thickness and/or concentration of an element common to both the coating layer and the base substrate. The accuracy of the determinations can be checked by a statistical approach, using chi squared test analysis of the difference values for the intensity measurements.
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