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A FABRICATION METHOD A THIN FILM ELEMENT, ACTIVE MATRIX SUBSTRATE, LCD AND PREVENT METHOD STATIC DESTRUCTION OF AN ACTIVE MATRIX DEVICE IN LCD
A FABRICATION METHOD A THIN FILM ELEMENT, ACTIVE MATRIX SUBSTRATE, LCD AND PREVENT METHOD STATIC DESTRUCTION OF AN ACTIVE MATRIX DEVICE IN LCD
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机译：LCD中有源矩阵器件的制造方法，薄膜元件，有源矩阵基板和LCD的预防方法
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摘要
The present invention provides an active matrix substrate having a novel manufacturing method which can reduce the manufacturing process of an amorphous silicon thin film transistor having a bottom gate structure (inverse stagger structure), and an electrostatic protection means prepared using the manufacturing method, and the substrate. It relates to a liquid crystal display device used.;In the manufacturing process of a thin film transistor, the opening part for connecting a contact hole and an external terminal is formed simultaneously, and an ITO film is used as wiring.;The electrostatic protection means consists of a bidirectional diode (electrostatic protection element) constructed by using a MOS transistor connected between an electrode (pad) for connecting external terminals and a common potential line. The electrostatic protection element is substantially a transistor, has a large current capacity, and can be formed so as not to complicate the process by using the TFT forming process of the pixel portion as it is.
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