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THIN FILM GROWTH METHOD AND THIN FILM GROWTH APPARATUS FOR LIQUID PHASE EPITAXY

机译：用于液相表位的薄膜生长方法和薄膜生长装置

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摘要

PURPOSE: A thin film growth method and a thin film growth apparatus for a liquid crystal epitaxy are provided to increase the quality of a formed thin film by improving the contact characteristics between a growth solution and a substrate, and to realize the thin film growth method effectively. CONSTITUTION: A boat structure of the thin film growth apparatus for a liquid crystal epitaxy comprises an upper body(43) where a plurality of upper wells(44) are formed in parallel to put a raw material solution for growth in the well. And, the upper body has a hole(46) in its bottom. A bottom body(50) has a plurality of bottom wells(47) corresponding to the upper wells of the upper body, and forms a guide groove in a center par by being assembled with the upper wells. And, a slider for substrate transportation has a groove to hold a semiconductor substrate(48) and transports the semiconductor substrate by being inserted into the guide groove. A plurality of covers(42) are inserted into each upper well, and a pressure slider(41) presses each cover downward.

机译：目的：提供一种用于液晶外延的薄膜生长方法和薄膜生长设备，以通过改善生长溶液与基板之间的接触特性来提高形成的薄膜的质量，并实现该薄膜生长方法有效。构成：用于液晶外延的薄膜生长设备的舟形结构包括上主体（43），在该上主体中平行形成有多个上孔（44），以将用于生长的原料溶液放入该孔中。并且，上主体在其底部具有孔（46）。底部主体（50）具有与上部主体的上部凹坑对应的多个下部凹坑（47），并通过与上部凹坑组装而在中央形成导向槽。并且，用于基板输送的滑块具有用于保持半导体基板（48）的槽，并且通过插入到引导槽中来输送半导体基板。将多个盖（42）插入每个上部井中，并且压力滑块（41）将每个盖向下压。

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公开/公告号KR100269201B1

专利类型
公开/公告日2000-10-16

原文格式PDF
申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;
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申请/专利号KR19920013860
发明设计人 KIM HAN SAENG;
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申请日1992-07-31
分类号H01L21/20;
国家 KR
入库时间 2022-08-22 01:44:36

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