NON VOLATILE SINGLE ELECTRON TRANSISTOR MEMORY USING QUANTUM DOT AND METHOD THEREOF, AND SINGLE ELECTRON TRANSISTOR USING QUANTUM DOT AND METHOD THEREOF

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• 2. 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法 [P] . 中国专利： CN101258607B . 2011.01.05
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  机译： 量子点尺寸可控的单电子晶体管，单电子晶体管与双栅MOSFET的集成及其制造方法

• 4. METHOD FOR FABRICATING QUANTUM DOT AND SINGLE ELECTRON MEMORY DEVICE USING THE QUANTUM DOT [P] . 韩国专利： KR20020021818A . 2002-03-23

  机译： 利用量子点制造量子点和单电子存储器的方法

• 5. METHOD FOR FABRICATING QUANTUM DOT AND SINGLE ELECTRON MEMORY DEVICE USING THE QUANTUM DOT [P] . 韩国专利： KR100347146B1 . 2002-08-03

  机译： 利用量子点制造量子点和单电子存储器的方法

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