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METHOD OF MANUFACTURING TITANIUM SALICIDE BY EVAPORATING TITANIUM AND NITRIC TITANIUM
METHOD OF MANUFACTURING TITANIUM SALICIDE BY EVAPORATING TITANIUM AND NITRIC TITANIUM
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机译：蒸发钛和氮化钛制造水化钛的方法
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摘要
PURPOSE: manufacture Titanium silicide is provided by the titanium of evaporation titanium and nitrogen prevents uniform titanium film from obtaining, and is formed from outside contamination until Titanium silicide by rapid thermal treatment (RTP) by standard sputter method. CONSTITUTION: manufacture Titanium silicide is by the titanium of evaporation titanium and nitrogen comprising steps of evaporation titanium and nitric acid ti thin film layer, pass through entire one gate of silicon wafer of standard sputtering method, active area is formed with one side wall clearance wall and source/drain regions, chip also has isolated area; Formation titanium silicide only has to contact in one side and be formed on titanium film gate electrode and source/drain region on silicon, and the heat treatment (RTP) by executing rapid thermal treatment makes titanium film to the evaporation titanium and nitric acid of silicon wafer; Staying in titanium film with elimination titanium and nitric acid, upper layer silicon wafer and the low-resistance silicide of drop are formed in gate electrode and source/drain regions RTP passes through the process again.
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