首页> 外国专利> PHOTO-DIODE HAVING LIGHTWAVE TUBE WITH 1.3um/1.5um LIGHTWAVE AND METHOD THEREOF

PHOTO-DIODE HAVING LIGHTWAVE TUBE WITH 1.3um/1.5um LIGHTWAVE AND METHOD THEREOF

机译:具有1.3um / 1.5um光波的光电二极管的光电二极管及其方法

摘要

PURPOSE: A method for manufacturing an optic module having a light wave with 1.3um/1.5um is provided to manufacture the optic module with low cost, small size and high tolerant error. CONSTITUTION: The method for manufacturing an optic module having a light wave with 1.3um/1.5um comprises the steps of: depositing sequentially an N-InP layer(74,75), an N-InGaAsP layer(76) and a P-InGaAsP layer(78) on a N-InP substrate(80); exposing the InP layer by deleting the P-InGaAsP layer in one side on the N-InP substrate and the N-InGaAsP layer in the bottom; forming sequentially an N-InGaAs layer(77) and a P-InP layer(77a) on an upper area of the N-InP layer exposed; deleting the photoresist mask; forming a SiN mask exposing a predetermined space between the P-InGaAs layer and the P-InP layer on a predetermined area on an upper area of the P-InGaAs layer and the P-InP layer; etching the exposed P-InGaAsP layer and P-InP layer, and N-InGaAsP layer and N-InGaAs layer at the bottom so that the substrate layer of the N-InP layer; and forming a insulation layer(86) for protecting and anti-reflection on the overall substrate
机译:目的:提供一种光波强度为1.3um / 1.5um的光模块的制造方法,以低成本,小尺寸和高容错性制造光模块。构成:制造光波为1.3um / 1.5um的光模块的方法,包括以下步骤:依次沉积N-InP层(74,75),N-InGaAsP层(76)和P-InGaAsP N-InP衬底(80)上的层(78);通过删除N-InP衬底上的一侧的P-InGaAsP层和底部的N-InGaAsP层来暴露InP层;在露出的N-InP层的上部区域上依次形成N-InGaAs层(77)和P-InP层(77a);删除光刻胶掩模;在P-InGaAs层和P-InP层的上部区域的预定区域上形成在P-InGaAs层和P-InP层之间暴露预定空间的SiN掩模;蚀刻暴露的P-InGaAsP层和P-InP层,以及在底部的N-InGaAsP层和N-InGaAs层,以使N-InP层的衬底层;在整个基板上形成用于保护和抗反射的绝缘层(86)

著录项

  • 公开/公告号KR20000003739A

    专利类型

  • 公开/公告日2000-01-25

    原文格式PDF

  • 申请/专利权人 HYUNDAI ELECTRONICS IND. CO. LTD.;

    申请/专利号KR19980025011

  • 发明设计人 LEE JAE HYUK;KIM DON SOO;

    申请日1998-06-29

  • 分类号H01S3/18;

  • 国家 KR

  • 入库时间 2022-08-22 01:46:16

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