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DIAMOND THIN FILM OR CBN, BCN OR CN THIN FILM, REFORMING METHOD OF THESE THIN FILMS, AND REFORM, FORMING AND PROCESSING METHODS OF THESE THIN FILMS
DIAMOND THIN FILM OR CBN, BCN OR CN THIN FILM, REFORMING METHOD OF THESE THIN FILMS, AND REFORM, FORMING AND PROCESSING METHODS OF THESE THIN FILMS
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机译：金刚石薄膜或CBN，BCN或CN薄膜，这些薄膜的重整方法以及这些薄膜的重整，形成和加工方法
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摘要
PROBLEM TO BE SOLVED: To efficiently remove strains, defects, colors or the like or to stably reform a thin film to oriented polycrystalline or single crystal with good reproducibility by irradiating the thin film of synthetic diamond or the like, which is formed on a substrate by the gas phase synthesis, with a specific micro wave to heat it to a specific temp. SOLUTION: A thin film of diamond, CBN, BCN or CN formed by the gas phase synthesis on a substrate or their self-supporting films obtained by removing their substrates are reformed by irradiating each thin film with micro-wave of 1-500 GHz under a vacuum, an inert or a reductive atmosphere and heating it to 500-3,000 deg.C. Thereby, the thin film having an area, where the half-value width of the spectrum obtained by Raman spectroscopy having a wavelength of =1 m is almost constant along the film thickness direction in the reformed film thickness, is obtained, and the thin film having strain property such that the half-value width of the spectrum mentioned above is =85% of the maximum half-value width of the residual part of the film thickness is obtained. Further, the refractive index of the reformed thickness part can be made larger by =0.1% than that of the minimum refractive index of the residual part of non-reformed thickness part. Furthermore, at least a portion of the part to be reformed can be converted into polycrystalline or single crystal or semiconductor.
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