首页>
外国专利>
CEMENTED CARBIDE FORMED WITH PLANAR CRYSTAL TUNGSTEN- CONTAINING LAYER ON SURFACE, ITS PRODUCTION AND CEMENTED CARBIDE COATED WITH DIAMOND ON SURFACE
CEMENTED CARBIDE FORMED WITH PLANAR CRYSTAL TUNGSTEN- CONTAINING LAYER ON SURFACE, ITS PRODUCTION AND CEMENTED CARBIDE COATED WITH DIAMOND ON SURFACE
展开▼
机译：表面含平面钨合金层的硬质合金及其生产方法及表面金刚石涂层的硬质合金
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To prevent the peeling of a diamond layer applied on the surface of an alloy, on the surface, by allowing planar crystal tungsten carbide to have a specified aspect ratio and to be formed in a vertical state and/or an inclined state to the boundary between the alloy inside and the surface layer as the main components.;SOLUTION: This alloy is composed of a surface layer to a thickness of at least 3 μm and an alloy inside. The surface layer contains planar crystal tungsten carbide having ≥3 aspect ratio. Then, among the diffraction rays of tungsten carbide by the X-ray diffraction of the surface in the surface layer, in the case the peak intensity of the (001) crystal face is defined as h(001), and the peak intensity of the (101) crystal face as h(101), the relation expressed by the inequality is valid. Preferably, the content of the planar crystal tungsten carbide in the surface layer is ≥70 vol.% in the whole of the surface layer, and the content of the planar crystal tungsten carbide having ≥6 aspect ratio is ≥50 vol.% in the whole of the surface layer.;COPYRIGHT: (C)2000,JPO
展开▼
