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Semiconductor thin film growth method of InGaAs or InGaAsP
Semiconductor thin film growth method of InGaAs or InGaAsP
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机译：InGaAs或InGaAsP的半导体薄膜生长方法
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摘要
PURPOSE: To improve physical properties of a growth- orcomposition-controlled crystal in applying light to a semiconductor substrate to selectively control the growth or composition of a semiconductor thin film. ;CONSTITUTION: When irradiating a part of a single-crystal substrate with laser light and growing a III-V compound semiconductor thin film on the substrate by the organometallic molecular beam epitaxy method, the amount of feeding V-group metal is increased/decreased beyond a feeding amount giving a low ratio of the growth speed of an irradiated area to that of an unirradiated area and beyond a feeding amount giving a high ratio; or the laser irradiation intensity per unit time is increased/decreased; or the temperature of the substrate is raised/lowered; or the amount of feeding III-group material is increased/ decreased. Then, laser light is applied at least in a state that the V group metal in fed at such a rate that the ratio is low.;COPYRIGHT: (C)1993,JPO&Japio
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