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Charged particle beam writing method for determining optimal exposure dose prior to pattern drawing

机译:在图案绘制之前确定最佳曝光剂量的带电粒子束写入方法

摘要

A charged particle beam writing method for determining an optimal exposure dose for each position in a pattern to be drawn on a target before actually drawing the pattern by irradiating the target with charged particles and drawing the pattern with the obtained optimal exposure doses, comprising the first step of determining the first approximate optimal exposure dose for each position on said target, the second step of determining the second optimal exposure dose for each position on said target by determining a corrective value di for correcting said first approximate optimal exposure dose obtained by multiplying the error in the exposure dose of the position produced when exposed to said first approximate optimal exposure dose by a regulation coefficient of a value substantially equal to the exposure dose U(x, y) to back scattering charged particles and adding said corrective value to said first approximate optimal exposure dose, said exposure dose being variable as a function of the location (x, y) of the position, the third step of repeating one of (1) the second step for a predetermined number of times, (2) the second step until each of said second approximate optimal exposure doses tends to converge, and (3) the second step until all the errors in said second approximate optimal exposure doses are found within a predetermined value.
机译:一种带电粒子束写入方法,该方法用于通过在实际绘制图案之前通过用带电粒子照射目标并以获得的最佳曝光剂量绘制图案来确定要绘制在目标上的图案中每个位置的最佳曝光剂量,该方法包括:确定所述目标上每个位置的第一近似最佳曝光剂量的步骤,通过确定用于校正所述第一近似最佳曝光剂量的校正​​值di来确定所述目标上每个位置的第二最佳曝光剂量的第二步骤,暴露于所述第一近似最佳暴露剂量时产生的位置的暴露剂量的误差,其调节系数的值基本上等于反向散射带电粒子的暴露剂量U(x,y)并将所述校正值添加到所述第一近似最优暴露剂量近似最佳暴露剂量,所述暴露剂量可随阈值变化在位置的位置(x,y),第三步将(1)第二步中的一个重复预定次数,(2)第二步,直到每个所述第二近似最佳暴露剂量趋于收敛, (3)第二步骤,直到发现所述第二近似最佳暴露剂量中的所有误差都在预定值内。

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