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Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
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机译：化学气相沉积由单硫或多齿配体的金属硫代羧酸盐络合物形成的金属硫化物膜
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摘要
In a method of depositing a metal sulfide film on a substrate a solution containing at least one metal compound precursor comprising at least one thiocarboxylate ligand SECR, wherein E is selected from the group consisting of O and S and wherein R is selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, halogenated alkyl, and halogenated aryl is prepared. The substrate is heated to a reaction temperature. The solution is evaporated to form vapors of the metal compound precursor. The vapors and the substrate heated to the reaction temperature are contacted. The reaction temperature is sufficient to decompose the metal compound precursor to form a metal sulfide film of at least one metal on the substrate.
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