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METHOD FOR FORMING SILICON NITRIDE FILM HAVING LOW LEAKAGE CURRENT AND HIGH BREAK DOWN VOLTAGE

机译:低漏电流和高击穿电压的硅氮化物膜的形成方法

摘要

Forming a first silicon nitride film thin film on the silicon substrate by a rapid thermal nitriding process, and forming a second silicon nitride film to a desired thickness by LPCVD. A method of forming a silicon nitride film used as a capacitor dielectric film is provided. In LPCVD, a gas that reduces the surface reaction is introduced into the growth surface of the silicon nitride film by means other than a means for supplying the starting material gas of the silicon nitride film, thereby improving the breakdown voltage and leakage current of the capacitor silicon nitride film.
机译:通过快速热氮化工艺在硅基板上形成第一氮化硅膜薄膜,并通过LPCVD将第二氮化硅膜形成为期望的厚度。提供一种形成用作电容器电介质膜的氮化硅膜的方法。在LPCVD中,通过用于供给氮化硅膜的原料气体的手段以外的方式将减少表面反应的气体引入到氮化硅膜的生长表面,从而改善了电容器的击穿电压和漏电流。氮化硅膜。

著录项

  • 公开/公告号KR0151233B1

    专利类型

  • 公开/公告日1998-12-01

    原文格式PDF

  • 申请/专利权人 NIPPON DENKI KK;

    申请/专利号KR19940024165

  • 发明设计人 요꼬자와 아유미;

    申请日1994-09-22

  • 分类号H01L21/318;

  • 国家 KR

  • 入库时间 2022-08-22 02:18:42

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