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METHOD FOR FORMING SILICON NITRIDE FILM HAVING LOW LEAKAGE CURRENT AND HIGH BREAK DOWN VOLTAGE
METHOD FOR FORMING SILICON NITRIDE FILM HAVING LOW LEAKAGE CURRENT AND HIGH BREAK DOWN VOLTAGE
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机译:低漏电流和高击穿电压的硅氮化物膜的形成方法
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摘要
Forming a first silicon nitride film thin film on the silicon substrate by a rapid thermal nitriding process, and forming a second silicon nitride film to a desired thickness by LPCVD. A method of forming a silicon nitride film used as a capacitor dielectric film is provided. In LPCVD, a gas that reduces the surface reaction is introduced into the growth surface of the silicon nitride film by means other than a means for supplying the starting material gas of the silicon nitride film, thereby improving the breakdown voltage and leakage current of the capacitor silicon nitride film.
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