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The grain growth device null which is used for the grain growth manner and this manner of the iii-v group
The grain growth device null which is used for the grain growth manner and this manner of the iii-v group
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机译：晶粒长大的方式和iii-v组的这种方式所使用的晶粒长大装置null
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摘要
PURPOSE:To control layer thicknesses and mixed crystal ratios with high accuracy by irradiating a substrate surface with the molecular beam of group III elements while supplying gases contg. halogens to the substrate surface at the time of growing a III-V compd. semiconductor crystal contg. at least two kinds of the group III elements by molecular beam epitaxial growth method. CONSTITUTION:The evaporated group III element materials (molecular beam sources: 101, 102, 103) are stuck on the surface of the substrate 110 while the gases contg. the halogens or halogen compds. are supplied (supplying means: 106) to the surface of the substrate 110 in the method for growing the crystal of the III-V compd. semiconductor contg. at least two kinds of the group III elements by the molecular beam epitaxial growth method Cl2, HCl, CCl4, and a gaseous mixture composed of H2 and Cl2, etc., are exemplified as the halogens or halogen compds.
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