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Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
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机译：削波正弦波形，以减少闪存EEPROM的隧穿氧化物中的循环感应电子陷阱
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摘要
The present invention provides method to erase and program flash EEPROMS devices using a clipped sine waveform (Vg). The clipped sine waveform reduces the tunneling oxide electric field between the floating gate and the source or drain region thereby reducing electron trapping. The method for the erase cycle comprises: applying a positive voltage to a source region; grounding a well region; floating the drain region; and simultaneously applying a negative clipped sine waveform voltage to a control gate during the erase cycle. The program cycle of the invention comprises: applying a voltage to a drain region; grounding a well region; floating a source region; and simultaneously applying a clipped sine waveform voltage to the control gate whereby the clipped sine waveforms reduce the electric field in a tunnel oxide layer which reduces the electron trapping.
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