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Apparatus and method using optical energy for specifying and quantitatively controlling chemically-reactive components of semiconductor processing plasma etching gas
Apparatus and method using optical energy for specifying and quantitatively controlling chemically-reactive components of semiconductor processing plasma etching gas
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机译：使用光能确定和定量控制半导体处理等离子体刻蚀气体的化学反应成分的设备和方法
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摘要
An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug. A further aspect of the invention concerns introducing optical energy of preselected frequencies or wavelengths into a semiconductor processing plasma to induce changes in the composition or character of reactive species within the plasma.
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