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A method for manufacturing a photoresist mask having an etching selectivity ratio higher than that of the etching layer

机译：具有比蚀刻层的蚀刻选择比高的蚀刻选择比的光致抗蚀剂掩模的制造方法

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摘要

The present invention relates to a method of manufacturing a photoresist mask having an etch selectivity higher than that of a photoresist mask, and more particularly, to a method of manufacturing a photoresist mask having an etch selectivity higher than that of arsenic (As) or boron fluoride₂) Are ion-implanted to make the surface of the photoresist layer harder.

机译：光刻胶掩模的制造方法技术领域本发明涉及一种具有比光刻胶掩模的蚀刻选择性高的蚀刻选择性的光刻胶掩模的制造方法，尤其涉及一种具有比砷（As）或硼的蚀刻选择性高的蚀刻选择性的光刻胶掩模的制造方法。氟化物_{2 ）被离子注入以使光致抗蚀剂层的表面更硬。}

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公开/公告号KR19980051527A

专利类型
公开/公告日1998-09-15

原文格式PDF
申请/专利权人 김영환;
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申请/专利号KR19960070429
发明设计人 류재옥;
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申请日1996-12-23
分类号G03F7/26;
国家 KR
入库时间 2022-08-22 02:47:59

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