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iii-v group compound semiconductor hetero structural substrate and iii-v group chemical compound hetero structural semiconductor equipment
iii-v group compound semiconductor hetero structural substrate and iii-v group chemical compound hetero structural semiconductor equipment
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机译：iii-v族化合物半导体异质结构半导体衬底和iii-v族化合物化合物异质结构半导体设备
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摘要
PURPOSE:To make it possible to obtain a substrate of III-V compound semiconductor heterostructure having a semiconductor layer, which is superior in crystallinity, by a method wherein a buffer layer containing GaAs, GaP or a mixture thereof as its main component is grown on a base substrate containing a material other than a III-V compound as its main component and an InGaAs active layer is grown on the buffer layer via a barrier layer containing AlGaAs or InAlAs as its main component. CONSTITUTION:A buffer layer 2 containing GaAs, GaP or a mixed crystal thereof as its main component is grown on a base substrate 1 containing a material other than a III-V compound as its main component. A barrier layer 3 containing AlGaAs or InAlAs as its main component is grown on this layer 2. Moreover, an active layer 4 containing InGaAs as its main component is grown on the layer 3. A functional layer 5 containing AlGaAs or InGaAs as its main component is grown on the layer 4, as required. Thereby, a substrate of a III-V compound semiconductor heterostructure, which can be manufactured easily in comparison and has a GaAs crystal layer which is superior in the quality of crystal, can be obtained.
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