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METHOD OF FORMING SILICON NITRIDE THIN FILM OR SILICON OXIDE NITRIDE GATE DIELECTRIC
METHOD OF FORMING SILICON NITRIDE THIN FILM OR SILICON OXIDE NITRIDE GATE DIELECTRIC
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机译：形成氮化硅薄膜或氧化硅氮化物栅介质的方法
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摘要
PROBLEM TO BE SOLVED: To form a gate insulation layer to contain scarcely hydrogen therein, by so exposing an oxygen containing layer formed on a semiconductor substrate to a plasma containing nitrogen as to entrap nitrogen in the oxygen containing layer. ;SOLUTION: A gate insulation layer 14 comprising an oxygen containing layer of 10 to 150 in thickness is formed on a semiconductor substrate 12. Then, the gate insulation layer 14 is so exposed to a plasma with nitrogen containing substances entrapped therein that the ionized substances are implanted in the surface of the layer 14 acceleratedly at a plasma potential without applying any bias voltage to the semiconductor substrate 12. As a result, nitrogen is entrapped in the gate insulation layer 14 or a nitride layer is formed in the surface portion of the substrate 12. Thereby, it is possible to make the gate insulation layer 14 scarcely contain hydrogen, and therefore, there can be realized a film which has the advantage of the electrical characteristic of an oxide film too, as utilizing actively the advantage of the barrier characteristic of a nitride film.;COPYRIGHT: (C)1998,JPO
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