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SEMICONDUCTOR MICROSCOPIC STRUCTURE FORMING METHOD, SEMICONDUCTOR ELEMENT FORMED USING IT RESONANT TUNNEL ELEMENT MANUFACTURE AND, RESONANT TUNNEL ELEMENT FORMED USING IT
SEMICONDUCTOR MICROSCOPIC STRUCTURE FORMING METHOD, SEMICONDUCTOR ELEMENT FORMED USING IT RESONANT TUNNEL ELEMENT MANUFACTURE AND, RESONANT TUNNEL ELEMENT FORMED USING IT
PROBLEM TO BE SOLVED: To form a microscopic structure to be used for the quantum well of a resonant tunnel diode at low cost and high throughput by a method wherein a semiconductor layer is selectively etched using a mask pattern having the first and the second aperture parts utilizing lithographic technique. ;SOLUTION: A mask pattern 109, having the first and the second aperture parts, is formed on a substrate where a semiconductor layer is formed on the upper part. Then, using said mask pattern 109, a semiconductor microscopic structure 104, extending in the first direction in parallel with the surface of the substrate, is formed by selectively etching the semiconductor layer. In the etching process conducted at that time, the etching speed vertical to the first direction and the second direction in parallel with substrate surface is to be substantially zero against the etching speed of the first direction. The width of the semiconductor microscopic structure 104 should be substantially equal to the shortest distance in the second direction between the first aperture part and the second aperture part.;COPYRIGHT: (C)1997,JPO
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