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Crystallization of grain boundery phases in silicon carbide ceramics
Crystallization of grain boundery phases in silicon carbide ceramics
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机译:碳化硅陶瓷中晶界相的结晶
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摘要
A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300° C. to 2100° C. under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.
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